ST mjd31 mjd32 free download

File name mjd31_mjd32.pdf

MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C APPLICATIONS 3 s GENERAL PURPOSE SWITCHING AND 1 AMPLIFIER TRANSISTORS DESCRIPTION s The MJD31B and MJD31C and the MJD32B DPAK and MJD32C form complementary NPN-PNP TO-252 pairs. They are manufactured using Epitaxial (Suffix "T4") Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t MJD31B/32B MJD31C/32C V CBO Collector-Base Voltage (IE = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 80 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 3 A I CM Collector Peak Current 5 A IB Base Current 1 A o P t ot Total Dissipation at T c = 25 C 15 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C June 1997 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 8.33 C/W o R t hj- amb Thermal Resistance Junction-ambient Max 100 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I Ces Collector Cut-off V CB = Max Rating