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2SC5345 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Dimensions in inches and (millimeters) Marking: 5345 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power dissipation 300 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 4 V Collector cut-off current ICBO VCB=30V, IE=0 0.5 A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A DC current gain hFE VCE=6V, IC=1mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V Transition frequency fT VCE=6V, IC=1mA 550 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 1.4 pF CLASSIFICATION OF hFE Rank R O Y Range 40-80 70-140 120-240 2SC5345