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VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS(off) Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N -7 -25 60 VCR4N -7 -25 600 VCR7N -5 -25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled D Gain Ranging Capability/Wide Range D Variable Gain Amplifiers Resistance Signal Attenuation D Voltage Controlled Oscillator D High Off-Isolation D No Circuit Interaction D AGC D High Input Impedance D Simplified Drive DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an Key to device performance is the predictable rDS change ac drain-source resistance that is controlled by a dc bias versus VGS bias where: voltage (VGS) applied to their high impedance gate terminal. Minimum rDS occurs when VGS = 0 V. As VGS approaches the r DS(@ V GS + 0) pinch-off voltage, rDS rapidly increases. This series of junction V GS FETs is intended for applications where the drain-source r DSbias [ 1