LGE 2sd879 free download

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2SD879(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of light to be emitted. Small package and large allowable collector dissipation (TO-92, PC=750mW). Large current capacity and highly resistant to break-down. Excellent linearity of hFE in the region from low current to high Dimensions in inches and (millimeters) current. Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO 10 V Collector-Emitter Voltage VCEX 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current