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SEMICONDUCTOR 2N7000 N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C High density cell design for low RDS(ON). Voltage controlled small signal switch. A Rugged and reliable. High saturation current capablity. N DIM MILLIMETERS E A 4.70 MAX K G B 4.80 MAX D C 3.70 MAX J D 0.45 E 1.00 F 1.27 MAXIMUM RATING (Ta=25 ) G 0.85 H 0.45 _ CHARACTERISTIC SYMBOL RATING UNIT H J 14.00 + 0.50 F F K 0.55 MAX