LGE mmdt5401 free download

File name mmdt5401.pdf

MMDT5401 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING:K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A , IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 A Emitter cut-off current IEBO VEB=-3V , IC=0 -0.05 A hFE(1) VCE=-5 V, IC= -1mA 50 DC current gain hFE(2) VCE=-5 V, IC= -10mA 60 240 hFE(3) VCE=-5 V, IC= -50mA 50 VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V VBE(sat)1 IC= -10 mA, IB=-1mA -1 V Base-emitter saturation voltage VBE(sat)2 IC= -50 mA, IB=-5mA -1 V Transition frequency fT VCE= -10V, IC= -10mA,f = 100MHz 100 MHz Output Capacita