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MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Base-Emitter Voltage (IC = 0) 5 V IC Collector Current 4 A IB Base Current 0.1 A P tot Total Power Dissipation at T case 25 o C 40 W o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C For PNP types voltage and current values are negative. January 1997 1/4 MJE802-MJ803 THERMAL DATA o R thj-amb Thermal Resistance Junction-ambient Max 3.13 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V CB = rated V CBO 100