Philips bf245a-b-c free download

File name bf245a-b-c.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION Frequencies up to 700 MHz. 1 d drain 2 s source APPLICATIONS 3 g gate LF, HF and DC amplifiers. DESCRIPTION 1 handbook, halfpage 2 General purpose N-channel symmetrical junction 3 d field-effect transistors in a plastic TO-92 variant package. g s MAM257 CAUTION The device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 30 V VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8 V VGSO gate-source voltage open drain 30 V IDSS drain current VDS = 15 V; VGS = 0 BF245A