Samsung kse180 free download

File name kse180.pdf

KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO TO-126 AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage : KSE180 VCBO 60 V : KSE181 80 V : KSE182 100 V Collector-Emitter Voltage VCEO : KSE180 40 V : KSE181 60 V : KSE182 80 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A 1. Emitter 2. Collector 3. Base Collector Current (Pulse) IC 6 A Base Current (DC) IB 1 A ) Collector Dissiapation (T A=25 PC 1.5 W Collector Dissipation ( T =25) PC 12.5 W C Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc=25) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : KSE180 VCEO(sus) IC = 10mA, IB = 0 40 V : KSE181 60 V : KSE182 80 V Collector Cutoff Current : KSE180 ICBO VCB = 60V, IB = 0 0.1 uA : KSE181 VCB = 80V, IE = 0 0.1 uA : KSE182 VCB = 100V, IE = 0 0.1 uA : KSE180 VCB = 60V, IE = 0, T C = 150 0.1 mA : KSE18