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Descr: . Electronic Components Datasheets Active components Transistors LGE stb1277.pdf
Group:Electronics > Components > Transistors
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STB1277(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Audio power amplifier High current application High current : IC=-2A Complementary pair with STD1862 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -2 A PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC= -100uA, IE=0 -30 V Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -30 V Emitter-base breakdown voltage VEBO IE= -1mA, IC=0 -5 V Collector cut-off current ICBO VCB= -30 V, IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 uA DC current gain hFE VCE=-2V, IC= -500mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.8 V Base-emitter on voltage VBE(on) VCE=-2V, IC= -500mA -1 V Transition frequency fT VCE= -5V, IC= -50mA 170 MHz Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHZ 48 pF CLASSIFICATION hFE Rank O Y Range 100-200 160-320 STB1277(PNP)

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