KEC ktc2036 free download

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SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=1.0V(Max) at IC=2A, IB=0.2A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 80 V VCEO 60 Collector-Emitter Voltage V VCER 100 Emitter-Base Voltage VEBO 10 V Collector Current IC 3 A Base Current IB 0.5 A Collector Power Ta=25 2 PC W Dissipation Tc=25 20 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARA CTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 1 A Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 60 - - V DC Current Gain hFE (Note) VCE=5V, IC=0.5A 100 - 300 Collector Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - 0.25 1.0 V Base-Emitter Voltage VBE VCE=5V, IC=0.5A - 0.7 1.0 V Transition Frequency fT VCE=5V, IC=0.5A - 30 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF Turn-on Time ton - 0.65 - Switching Time Storage Time tstg - 1.3 - S Fall Time tf - 0.65 - Note : hFE Classification Y:100~200, GR:150~300 2010. 7. 5