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2SB1116/1116A(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 2SB1116 -60 VCBO V 2SB1116A -80 Collector-Emitter Voltage 2SB1116 -50 VCEO V 2SB1116A -60 VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.75 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT 2SB1116 -60 Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 V 2SB1116A -80 2SB1116 -50 Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 V 2SB1116A -60 Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -6 V VCB=-60V,IE=0 2SB1116 Collector cut-off current ICBO -0.1 A VCB=-80V,IE=0 2SB1116A Emitter cut-off current