KEC mmbta44 free download

File name mmbta44.pdf

SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-BaseVoltage VCBO 450 V Collector-EmitterVoltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 450 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 400 - - V Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100 A, IB=0 450 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V Collector Cut off Current ICBO VCB=400V, IE=0 - - 100 nA Collector Cut off Current ICES VCE=400V, IB=0 - - 500 nA Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA VCE=10V, IC=1mA 40 - - VCE=10V, IC=10mA 50 - 200 DC Current Gain * hFE VCE=10V, IC=50mA 45 - - VCE=10V, IC=100mA 40 - - VCE(sat) 1 IC=1mA, IB=0.1mA - - 0.4 Collector-Emitter Saturation Voltage * VCE(sat) 2 IC=10mA, IB=1mA - - 0.5 V VCE(sat) 3 IC=50mA, IB=5mA - - 0.75 Base-Emitter Saturation Vo