ST std22nm20n free download

File name std22nm20n.pdf

STD22NM20N N-CHANNEL 200V - 0.088 - 22A DPAK ULTRA LOW GATE CHARGE MDmeshTM II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 22 A WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088 HIGH dv/dt and AVALANCHE CAPABILITIES LOW INPUT CAPACITANCE 3 LOW GATE RESISTANCE 1 DESCRIPTION DPAK t( s) uc This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technol- ogy to lower voltages. The device exhibits world- d wide lowest gate charge for any given on- resistance. Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom P ro and Computer applications. Used in combination with secondary-side low-voltage STripFETTM products, it contributes to reducting losses and te Figure 2: Internal Schematic Diagram le boosting effeciency. so APPLICATIONS - Ob s) The MDmeshTM family is very suitable for increas- t( ing power density allowing system miniaturization and higher efficiencies d uc Pro e let so Table 2: Order Codes Ob SALES TYPE STD22NM20NT4 MARKING D22NM20N PACKAGE DPAK PACKAGING TAPE & REEL Rev. 5 November 2005 1/10 STD22NM20N Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k)