Wietron ktc3876 free download

File name ktc3876.pdf

KTC3876 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 35 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipation TA =25 C PD 200 mW Junction and Storage, Temperature TJ, Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1 mA dc, IB=0) V(BR)CEO 30 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO 35 - Vdc Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 5.0 - Vdc Collector Cutoff Current (VCB= 35Vdc , IE=0) ICBO - 0.1 uAdc Emitter Cutoff Current (VEB= 5.0 Vdc , IC =0) IEBO - 0.1 uAdc WEITRON 1/3 30-Jul-2012 http://www.weitron.com.tw KTC3876 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Ga