Philips 2n7002ck free download

File name 2n7002ck.pdf

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 -- 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I Logic-level compatible I Very fast switching I Trench MOSFET technology I ESD protection up to 3 kV 1.3 Applications I Relay driver I High-speed line driver I Low-side loadswitch I Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 60 V ID drain current - - 300 mA IDM peak drain current single pulse; - - 1.2 A tp 10