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Descr: . Electronic Components Datasheets Active components Transistors Ixys ixfn200n10p.pdf
Group:Electronics > Components > Transistors
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File name ixfn200n10p.pdf

PolarTM HiPerFET IXFN 200N10P VDSS = 100 V Power MOSFET ID25 = 200 A RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25

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