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Descr: . Electronic Components Datasheets Active components Transistors Ixys ixtc160n10t.pdf
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ixtc160n10t.pdfPreliminary Technical Information TrenchMVTM IXTC160N10T VDSS = 100 V Power MOSFET ID25 = 83 A (Electrically Isolated Back Surface) RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 V DSS TJ = 25

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