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2SB1370(PNP) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25) 30 W (Tcase=25) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A TJ Junction temperature 150 Tstg Storage temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50A, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -10 A Emitter cut-off current IEBO VEB=-4V, IC=0 -10 A DC current gain hFE * VCE=-5V, IC=-500mA 100 320 Collector-emitter saturation voltage VCE(sat) * IC=-2A, IB=-0.2A -1.5 V Base-emitter saturation voltage VBE(sat) * IC=-2A, IB=-0.2A -1.5 V Transition frequency fT VCE=-5V, IC=-50