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Descr: . Electronic Components Datasheets Active components Transistors LGE kta1266.pdf
Group:Electronics > Components > Transistors
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KTA1266(PNP) TO-92 Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -0.15 A PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-100A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A hFE(1) VCE=-6V, IC=-2mA 70 400 DC current gain hFE(2) VCE=-6V, IC=-150mA 25 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1.1 V Transition frequency fT VCE=-10V, IC=-1mA 80 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 7 pF VCE=-6V, Ic=-0.1mA, Noise figure NF 10 dB

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