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STL9N3LLH5 N-channel 30 V, 0.015 9 A, PowerFLATTM (3.3x3.3) , STripFETTM V Power MOSFET Features RDS(on) Type VDSS ID max STL9N3LLH5 30 V < 0.019 9 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLATTM(3.3x3.3) High avalanche ruggedness (Chip scale package) Low gate drive power losses Applications Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST's proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STL9N3LLH5 9N3L PowerFLATTM (3.3x3.3) Tape and reel July 2009 Doc ID 16012 Rev 1 1/12 www.st.com 12 Contents STL9N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/12 Doc ID 16012 Rev 1 STL9N3LLH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage