WingShing 2sc1050 free download

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2SC1050 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 300 V VCEO Collector-emitter voltage (open base) - 250 V IC Collector current (DC) - 1 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 40 W VCEsat Collector-emitter saturation voltage IC = 0.5A; IB = 0.1A - 1.2 V VF Diode forward voltage IF = 0.5A 1.5 2.0 V tf Fall time - s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 300 V VCEO Collector-emitter voltage (open base) - 250 V VEBO Emitter-base oltage (open colloctor) 5 V IC Collector current (DC) - 1 A IB Base current (DC) - 0.2 A Ptot Total power dissipation Tmb 25 - 40 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current VCB=300V - 0.2 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 250 VCEsat Collector-emitter saturation voltages IC = 0.5A; IB =0.1A