LGE ktc3875 free download

File name ktc3875.pdf

KTC3875 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A DC current gain hFE VCE= 6V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.1 0.25 V base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V Transition frequency fT VCE=10V, IC= 1mA 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 2.0 3.5 pF Noise figure NF VCE=6V,IC=0.1mA,Rg=10k,f=1KHZ 1.0 10 dB CLASSIFICATION OF hFE Rank