LGE bc807 sot-23 free download

File name bc807_sot-23.pdf

BC807-16 BC807-25 BC807-40 1. BASE SOT-23 Transistor (PNP) 2. EMITTER 3. COLLECTOR SOT-23 Features Ldeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10A, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE= -1A, IC=0 -5 V Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 A Collector cut-off current ICEO VCE= -40V, IB=0 -0.2 A Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 A DC current gain 807-16 100 250 807-25 hFE(1) VCE= -1V, IC= -100mA 160 400 807-40 250 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=