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STP50NE08 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID STP50NE08 80 V <0.024 50 A s TYPICAL RDS(on) = 0.020 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED CHARACTERIZATION 3 s) 2 DESCRIPTION 1 This Power MOSFET is the latest development of t( uc SGS-THOMSON unique "Single Feature SizeTM " TO-220 strip-based process. The resulting transistor d ro shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a P remarkable manufacturing reproducibility. le te INTERNAL SCHEMATIC DIAGRAM so APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING Ob s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS - (s) s AUTOMOTIVE ENVIRONMENT (INJECTION, ct ABS, AIR-BAG, LAMPDRIVERS, Etc.) o du Pr ABSOLUTE MAXIMUM RATINGS e Symbol Parameter Value Unit let V DS Drain-source Voltage (V GS = 0) 80 V V DGR o Drain- gate Voltage (R GS = 20 k)