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BUV60 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n FAST SWITCHING TIMES n LOW SWITCHING LOSSES n VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V CEV Collector-emitter Voltage (VBE = -1.5V) 250 V V CEO Collector-emitter Voltage (IB = 0) 125 V V EBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 50 V I CM Collector Peak Current 80 V IB Base Current 10 A I BM Base Peak Current 18 A P Bas e Reverse Bias Base Dissipation 3 A (B. E. junction in avalanche) o P tot T otal Power Dissipation at Tc ase 25 C 250 W o T s tg Storage Temperature -65 to 200 C o Tj Max Operating Junction Temperature 200 C October 1995 1/5 BUV60 THERMAL DATA o R thj -ca se Thermal Resistance Junction-case Max 0.7 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit I CER Collector Cut-off V CE = V CEV 1 mA Current (R BE = 10) V CE = V CEV Tc = 100o C 5 mA I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA o Current