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STP12NB30 STP12NB30FP N-CHANNEL 300V - 0.34 - 12A TO-220/TO-220FP PowerMESHTM MOSFET TYPE VDSS RDS(on) ID STP12NB30 300 V < 0.40 12A STP12NB30FP 300 V < 0.40 12A s TYPICAL RDS(on) = 0.34 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 2 2 s VERY LOW INTRINSIC CAPACITANCES 1 1 s GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP12NB30 STP12NB30FP VDS Drain-source Voltage (VGS = 0) 300 V VDGR Drain-gate Voltage (RGS = 20 k) 300 V VGS Gate- source Voltage