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STB7NB40 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STB7NB40 400 V < 0.9 7.0 A s TYPICAL RDS(on) = 0.75 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 1 s GATE CHARGE MINIMIZED s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (Suffix "T4") Using the latest high voltage technology, SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t STB7NB40 V DS Drain-source Voltage (V GS = 0) 400 V V DGR Drain- gate Voltage (R GS = 20 k) 400 V V GS Gate-source Voltage