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BUW50 SILICON NPN SWITCHING TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION s TURN-ON AND TURN-OFF TAIL SPECIFICATIONS s TURN-ON dic/dt FOR BETTER RECTIFIER CHOICE 3 2 s SWITCHING TIMES SPECIFIED WITH AND 1 WITHOUT NEGATIVE BASE DRIVE s FAST SWITCHING TIMES TO-218 s LOW SWITCHING LOSSES s LOW ON-STATE VOLTAGE DROP s BASE CURRENT REQUIREMENTS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-emitter Voltage (V BE = -1.5V) 250 V V CEO Collector-emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 25 A I CM Collector Peak Current 50 A IB Base Current 6 A I BM Base Peak Current 12 A P Base Reverse Bias Base Power Dissipation 2 W (B.E. junction in avalance) P tot Total Power Dissipation at T case 25 o C 150 W o T stg Storage Temperature -65 to 175 C o Tj Max Operating Junction Temperature 175 C October 1995 1/5 BUW50 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off V CE = V CEV 1 mA Current (R BE = 10) V CE = V CEV