Philips bfr93a free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification 1997 Oct 29 Supersedes data of September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic lfpage 3 Low noise figure SOT23 package. PNP complement: BFT93. Very low intermodulation distortion. PINNING 1 2 APPLICATIONS Top view MSB003 RF wideband amplifiers and PIN DESCRIPTION oscillators. 1 base Marking code: R2p. 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V IC collector current (DC) 35 mA Ptot total power dissipation Ts 95 C 300 mW Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.6 pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 6 GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 dB IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 7 dB F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt; 1.9 dB Tamb = 25 C VO output voltage dim = 60 dB; IC = 30 mA; VCE = 8 V; 425 mV RL = 75 ; Tamb = 25 C;