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Now downloading free:Various ME3424 - N-Channel 30-V (D-S) MOSFET

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ME3424 - N-Channel 30-V (D-S) MOSFET

Original Chassis:ME3424 - N-Channel 30-V (D-S) MOSFET
Descr: . Electronic Components Datasheets Various ME3424 - N-Channel 30-V (D-S) MOSFET.pdf
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ME3424 - N-Channel 30-V (D-S) MOSFET.pdfME3424 N-Channel 30-V (D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON)28m @VGS=10V The ME3424 is the N-Channel logic enhancement mode power field RDS(ON)42m @VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptional on-resistance and maximum DC current minimize on-state resistance. These devices are particularly suited capability for low voltage application such as cellular phone and notebook APPLICATIONS computer power management and other battery powered circuits Power Management in Note book where high-side switching , and low in-line pow

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