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STW9NC80Z N-CHANNEL 800V - 0.82 - 9.4A TO-247 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STW9NC80Z 800 V <0.9 9.4 A n TYPICAL RDS(on) = 0.82 n EXTREMELY HIGH dv/dt CAPABILITY n GATE-TO-SOURCE ZENER DIODES n 100% AVALANCHE TESTED n VERY LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS n SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION n WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) 800 V VGS Gate- source Voltage