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2STA1962 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz Application 3 2 Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STA1962 2STA1962 TO-3P Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STA1962 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -230 V VCEO Collector-emitter voltage (IB = 0) -230 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -15 A ICM Collector peak current -30 A Ptot Total dissipation at TC = 25