Philips bsh108-02 free download

File name bsh108-02.pdf

BSH108 N-channel enhancement mode field-effect transistor M3D088 Rev. 02 -- 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSH108 in SOT23. 2. Features s TrenchMOSTM technology s Very fast switching s Logic level compatible s Subminiature surface mount package. 3. Applications s Battery management c s High speed switch c s Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 1 2 MBB076 s Top view MSB003 SOT23 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSH108 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150