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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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File name:	am81719.pdf [preview am81719]
Size:	64 kB
Extension:	pdf
Mfg:	ST
Model:	am81719 🔎
Original:	am81719 🔎
Descr:	. Electronic Components Datasheets Active components Transistors ST am81719.pdf
Group:	Electronics > Components > Transistors
Uploaded:	16-07-2020
User:	Anonymous
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File name am81719.pdf AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . REFRACTORY/GOLD METALLIZATION PRELIMINARY DATA . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147) hermetically sealed ORDER CODE BRANDING AM81719-030 81719-030 PIN CONNECTION DESCRIPTION The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW com- munications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency. 1. Collector 3. Emitter AM81719-030 is supplied in the industry-standard 2. Base 4. Base AMPACTM hermetic metal/ceramic package. ABSOLUTE MAXIMUM RATINGS (T case = 25

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