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STS11N3LLH5 N-channel 30 V, 0.012 , 11 A, SO-8 STripFETTM V Power MOSFET Features RDS(on) Type VDSS ID max STS11N3LLH5 30 V < 0.014 11 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) SO-8 Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This STripFETTMV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. Table 1. Device summary Order code Marking Package Packaging STS11N3LLH5 11D3L SO-8 Tape and reel July 2009 Doc ID 15982 Rev 1 1/12 www.st.com 12 Contents STS11N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 15982 Rev 1 STS11N3LLH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage