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Dual N & P Channel Digital FET
General Description Features
These dual N & P-Channel logic level enhancement mode field N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 @ VGS= 4.5V.
effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.60 @ VGS= 2.7 V.
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance. P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 @ VGS= -4.5V.
This device has been designed especially for low voltage RDS(ON) = 1.5 @ VGS= -2.7V.
applications as a replacement for bipolar digital transistors and
small signal MOSFETS. Since bias resistors are not required, Very small package outline SC70-6.
this dual digital FET can replace several differ|
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