Philips bfg10wx free download

File name bfg10wx.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor Small size discrete power amplifier encapsulated in a plastic, 4-pin lfpage 4 3 dual-emitter SOT343N package. 900 MHz and 1.9 GHz operating areas PINNING Gold metallization ensures excellent reliability. PIN DESCRIPTION 1 2 1 collector Top view MBK523 APPLICATIONS 2 emitter Common emitter class-AB 3 base operation in hand-held radio Marking code: T5. 4 emitter equipment up to 1.9 GHz. Fig.1 SOT343N. QUICK REFERENCE DATA RF performance at Tamb = 25 C in a common-emitter test circuit. f VCE PL Gp c MODE OF OPERATION (GHz) (V) (mW) (dB) (%) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 5 50 Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms 0.9 6 650 10 50 0.9 6 360 12.5 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 10 V VEBO emitter-base voltage open collector 2.5 V IC collector current (DC) 250 mA IC(AV) average collector