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MJE210 SILICON PNP TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -40 V V CEO Collector-Emitter Voltage (I B = 0) -25 V V EBO Base-Emitter Voltage (IC = 0) -8 V IC Collector Current -5 A I CM Collector Peak Current -10 A IB Base Current -1 A Total Power Dissipation at T case 25 o C 15 P tot W at T amb 25 o C 1.5 o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C September 1997 1/4 MJE210 THERMAL DATA o R thj-amb Thermal Resistance Junction-ambient Max 83.4 C/W o R thj-case Thermal Resistance Junction-case Max 8.34 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Collector Cut-off V CB = -40 V -100 nA I CBO