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2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 Dimensions in inches and (millimeters) Tstg Storage Temperature -55to +150 RJA Thermal Resistance, junction to Ambient 357 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A hFE(1) VCE=1V, IC= 0.1mA 20 hFE(2) VCE=1V, IC=1mA 40 DC current gain hFE(3) VCE=1V, IC= 10mA 80 hFE(4) VCE=1V, IC=150mA 100 300 hFE(5) VCE=2V, IC= 500mA 40 VCE(sat)1 IC=150 mA, IB=15mA 0.4 V Collector-emitter saturation voltage VCE(sat)2 IC=500 mA, IB=50mA 0.75 V