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PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-223 C 1. BASE FEATURES 2. COLLECTOR E 3. EMITTER C Power dissipation B P CM : 1 W Tamb=25 Collector current I CM : 0.6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range 1 2 3 T J Tstg: -55 to +150 Unit : mm ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10 A IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10 A IC=0 6 V Collector cut-off current ICBO VCB=60V , IE=0 0. 01 A Emitter cut-off current IEBO VEB= 3V , IC=0 0. 01 A hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 DC current gain hFE(4) VCE=10V, IC= 150mA 100 300 hFE(5) VCE=1V, IC= 150mA 50