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STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on) ID STD9N10 100 V < 0.27 9A s TYPICAL RDS(on) = 0.23 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE 3 s HIGH CURRENT CAPABILITY 2 3 s 175oC OPERATING TEMPERATURE 1 1 s APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK s THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX "-1") (Suffix "-1") (Suffix "T4") s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") APPLICATIONS INTERNAL SCHEMATIC DIAGRAM s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 100 V VDGR Drain- gate Voltage (R GS = 20 k) 100 V V GS Gate-source Voltage