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HD1750FX HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS STATE-OF-THE-ART TECHNOLOGY: Figure 1: Package DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT APPLICATIONS ISOWATT218FX HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH-END MONITORS Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1: Order Codes Part Number Marking Package Packaging HD1750FX HD1750FX ISOWATT218FX TUBE Rev. 2 December 2005 1/8 HD1750FX Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1700 V VCEO Collector-Emitter Voltage (IB= 0) 800 V VEBO Emitter-Base Voltage (IC= 0) 10 V IC Collector Current 24 A ICM Collector Peak Current (tp < 5ms) 36 A IB Base Current 12 A IBM Base Peak Current (tp < 5ms) 18 A Ptot o 75 W Total Dissipation at TC = 25 C Vins Insulation Withstand Voltage (RMS) from All Three Leads to 2500 V External Heatsink Tstg Storage Temperature -65 to 150