| File information: | |
| File name: | AO4427.pdf [preview AO4427] |
| Size: | 148 kB |
| Extension: | |
| Mfg: | Various |
| Model: | AO4427 🔎 |
| Original: | AO4427 🔎 |
| Descr: | . Electronic Components Datasheets Various AO4427.pdf |
| Group: | Electronics > Other |
| Uploaded: | 18-07-2020 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name AO4427.pdf AO4427 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4427 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -12.5 A (VGS = -20V) charge with a 25V gate rating. This device is suitable RDS(ON) < 12m (VGS = -20V) for use as a load switch or in PWM applications. The RDS(ON) < 14m (VGS = -10V) device is ESD protected. Standard Product AO4427 ESD Rating: 2KV HBM is Pb-free (meets ROHS & Sony 259 specifications). AO4427L is a Green Product ordering option. AO4427 and AO4427L are electrically identical SOIC-8 D Top View S D S D G S D G D S Absolute Maximum Ratings TA=25 | ||

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