Various AO4427 free download

File name AO4427.pdf

AO4427 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4427 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -12.5 A (VGS = -20V) charge with a 25V gate rating. This device is suitable RDS(ON) < 12m (VGS = -20V) for use as a load switch or in PWM applications. The RDS(ON) < 14m (VGS = -10V) device is ESD protected. Standard Product AO4427 ESD Rating: 2KV HBM is Pb-free (meets ROHS & Sony 259 specifications). AO4427L is a Green Product ordering option. AO4427 and AO4427L are electrically identical SOIC-8 D Top View S D S D G S D G D S Absolute Maximum Ratings TA=25