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STS8C5H30L N-channel 30 V, 0.018 8 A, P-channel 30 V, 0.045 5 A SO-8 , , low gate charge STripFETTM III MOSFET Features RDS(on) Type VDSS ID max STS8C5H30L(N-channel) 30 V < 0.022 8A STS8C5H30L(P-channel) 30 V < 0.055 5A Conduction losses reduced Switching losses reduced SO-8 Low threshold drive Standard outline for easy automated surface mount assembly Application Figure 1. Internal schematic diagram Switching applications Description The STS8C5H30L is a Power MOSFET realized with the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Part number Marking Package Packaging STS8C5H30L S8C5H30L SO-8 Tape and reel Note: For the p-channel MOSFET actual polarity of voltages and current has to be reversed June 2010 Doc ID 10809 Rev 6 1/14 www.st.com 14 Contents STS8C5H30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Doc ID 10809 Rev 6 STS8C5H30L Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter