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BFW43 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a VCEO of 150V are specified over a wide range of curent. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) -150 V V CEO Collector-Emitter Voltage (I B = 0) -150 V V EBO Emitter-Base Voltage (I C = 0) -6 V IC Collector Current -0.1 A o P t ot Total Dissipation at T amb 25 C 0.4 W at T case 25 o C 1.4 W o T stg St orage Temperature -55 to 200 C o Tj Max. Operating Junction Temperature 200 C November 1997 1/5 BFW43 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 125 C/W o R t hj- amb Thermal Resistance Junction-Ambient Max 438 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CBO Collector Cut-off V CE = -100 V -0.2 -10 nA Current (IE = 0) V CE = -100 V T a mb = 125 o C -0.03 -10