KEC 2n5551s free download

File name 2n5551s.pdf

SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES A _ 2.93 + 0.20 High Collector Breakdwon Voltage B 1.30+0.20/-0.15 C 1.30 MAX D : VCBO=180V, VCEO=160V 2 3 D 0.45+0.15/-0.05 A G E 2.40+0.30/-0.20 Low Leakage Current. H 1 G 1.90 : ICBO=50nA(Max.) VCB=120V H 0.95 J 0.13+0.10/-0.05 Low Saturation Voltage K 0.00 ~ 0.10 L 0.55 P P : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise : NF=8dB (Max.)