ST pd85025-s-e free download

File name pd85025-s-e.pdf

PD85025-E PD85025S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package PowerSO-10RF ESD protection (formed lead) In compliance with the 2002/95/EC European directive Description The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. Source PD85025-E's superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC Gate Drain approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Table 1. Device summary Order codes Package Packing PD85025-E PowerSO-10RF (formed lead) Tube PD85025S-E PowerSO-10RF (straight lead) PD85025TR-E PowerSO-10RF (formed lead) Tape and reel PD85025STR-E PowerSO-10RF (straight lead) August 2008 Rev 2 1/15 www.st.com 15 Contents PD85025-E, PD85025S-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . .