Philips bfr520t free download

File name bfr520t.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification 2000 Apr 03 Supersedes data of 1999 Nov 02 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated Low noise figure in a plastic SOT416 (SC-75) package. 3 lfpage High transition frequency Gold metallization ensures PINNING excellent reliability PIN DESCRIPTION 1 2 SOT416 (SC-75) package. 1 base Top view MBK090 2 emitter APPLICATIONS 3 collector Marking code: N2. Wideband applications such as satellite TV tuners, cellular phones, Fig.1 SOT416. cordless phones, pagers etc., with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V IC DC collector current 70 mA Ptot total power dissipation up to Ts = 75 C; note 1 150 mW hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 C 60 120 250 fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; 9 GHz Tamb = 25 C GUM maximum unilateral power IC = 20 mA; VCE = 6 V; f = 900 MHz; 15 dB gain Tamb = 25 C F noise figure IC = 5 mA; VCE = 6 V; f = 900 MHz; 1.1 1.6