Philips pbss304pd free download

File name pbss304pd.pdf

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 -- 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304ND. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I High-voltage DC-to-DC conversion I High-voltage MOSFET gate driving I High-voltage motor control I High-voltage power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter I Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current [1] - - -3 A ICM peak collector current single pulse; - - -5 A tp 1 ms RCEsat collector-emitter IC = -2 A; [2] - 75 100 m saturation resistance IB = -200 mA [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp 300